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Epitaxial graphene/Ge interfaces: a minireview


The recent discovery of the ability to perform direct epitaxial growth of graphene layers on semi- conductor Ge surfaces led to the huge interest to this topic. One of the reasons for this interest is the chance to overcome several present-day drawbacks on the way of the graphene integration in the modern semiconductor technology. The other one is connected with the fundamental studies of the new graphene-semiconductor interfaces, that might help with the deeper understanding of mechanisms, which governs graphene growth on different substrates as well as shed light on the interaction of graphene with these substrates, which range is now spread from metals to insulators. The present minireview gives a timely overview of the state-of-the-art in the field of studies of the graphene-Ge epitaxial interfaces and draw some perspective directions in this research area.

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Article information

07 Jan 2020
02 May 2020
First published
04 May 2020

Nanoscale, 2020, Accepted Manuscript
Article type

Epitaxial graphene/Ge interfaces: a minireview

Y. Dedkov and E. Voloshina, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/D0NR00185F

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