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Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications

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Abstract

A two-dimensional (2D) WOx/ZnO stack reveals a unique carrier transport behavior, which can be utilized as a novel device element to achieve a very high on/off ratio (>106) and an off current density lower than 1 nA cm−2. These unique behaviors are explained by a dynamic band alignment between WOx and ZnO, which can be actively modulated by a gate bias. The performance of FET utilizing the WOx/ZnO stack is comparable to those of other 2D heterojunction devices; however, it has a unique benefit in terms of process integration because of very low temperature process capability (T < 110 °C). The high on/off switching with extremely low off current density utilizing the dynamic band alignment modulation at the WOx/ZnO stack can be a very useful element for future device applications, especially in monolithic 3D integration or flexible electronics.

Graphical abstract: Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications

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Supplementary files

Article information


Submitted
31 Dec 2019
Accepted
29 Apr 2020
First published
01 May 2020

Nanoscale, 2020, Advance Article
Article type
Paper

Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications

H. Lee, J. Park, Y. J. Kim, S. Heo, J. Hwang, S. Kim, Y. Lee, K. Cho, M. M. Sung and B. H. Lee, Nanoscale, 2020, Advance Article , DOI: 10.1039/C9NR10988A

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