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Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process

Abstract

The growth of nonpolar GaN nanowires along [10¯1 0] orientation has been demonstrated via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The morphology and structure evolution as a dependence of the growth parameters was thoroughly studied to elucidate the nucleation and crystallization of nonpolar GaN nanowires. It has been found that the V/III ratio and temperature are critically important for high-quality nonpolar GaN nanowires. The existence of cubic GaN (c-GaN) transition layer between Au catalyst and hexagonal GaN (h-GaN) nonpolar nanowire was demonstrated by high-resolution transmission electron microscopy (HRTEM) characterization, which plays an important role in the initial nucleation of nonpolar GaN nanowire and the formation of stacking faults (SFs) in GaN nanowires grown at lower temperature. Optical investigation shows that the defect-related visible emission of nonpolar GaN nanowires is closely related to the growth process and can be selectively tailored. The synthetic strategy using GaCl3 as Ga precursor to learn the vapor phase epitaxy process in this work will provide a simple and efficient approach to obtain nonpolar GaN nanowires and will thus pave a solid way for the fundamental research of high-quality nonpolar GaN nanowires in optoelectronic nanodevices

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Supplementary files

Article information


Submitted
17 Nov 2019
Accepted
10 Jan 2020
First published
10 Jan 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Paper

Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process

C. Zhang, X. Liu, J. Li, X. Zhang, W. Yang, X. Jin, F. Liu, J. Yao, X. Jiang and B. Liu, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/C9NR09781C

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