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GexSi1-x Virtual-Layer Enhanced Ferromagnetism in Self-assembled Mn0.06Ge0.94 Quantum Dots Grown on Si Wafers by Molecular Beam Epitaxy

Abstract

The self-assembled Mn0.06Ge0.94 quantum dots (QDs) on Si substrate or GexSi1-x virtual substrate (VS) were grown by molecular beam epitaxy. The GexSi1-x VS of different thicknesses and Ge compositions x were utilized to modulate the ferromagnetic properties of the above QDs. The MnGe QDs on GexSi1-x VS show a significant enhanced-ferromagnetism with a Curie temperature above 220 K. On the basis of the microstructural and magnetization results, the ferromagnetic properties of the QDs on GexSi1-x VS are believed to come from the intrinsic MnGe ferromagnetic phase rather than any intermetallic ferromagnetic compounds of Mn and Ge. At the same time, we found that by increasing Ge composition x of GexSi1-x VS, the ferromagnetism of QDs grown on VS will markedly increase due to the improvements of hole concentration and Ge composition inside the QDs. These results are fundamentally important in the understanding and especially to the realization of high Curie temperature MnGe diluted magnetic semiconductors.

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Article information


Submitted
01 Nov 2019
Accepted
27 Dec 2019
First published
02 Jan 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Paper

GexSi1-x Virtual-Layer Enhanced Ferromagnetism in Self-assembled Mn0.06Ge0.94 Quantum Dots Grown on Si Wafers by Molecular Beam Epitaxy

L. Wang, Y. Zhang, T. Liu, Z. Zhang, H. Hu, Q. jia, J. Zou and Z. Jiang, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/C9NR09315J

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