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Issue 12, 2020
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Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

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Abstract

We report room temperature Hall mobility measurements, low temperature magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO2/Si substrates. We found that thermal annealing in vacuum at 450 °C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 Ω sq−1 after annealing, and are n-type doped, with carrier concentrations in the low 1020 cm−3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm2 V−1 s−1 for a 480 nm-thick film printed on SiO2/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1–1. These results represent the first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.

Graphical abstract: Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

  • This article is part of the themed collection: Nanocarbons
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Article information


Submitted
31 Oct 2019
Accepted
09 Feb 2020
First published
18 Mar 2020

Nanoscale, 2020,12, 6708-6716
Article type
Paper

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

G. Calabrese, L. Pimpolari, S. Conti, F. Mavier, S. Majee, R. Worsley, Z. Wang, F. Pieri, G. Basso, G. Pennelli, K. Parvez, D. Brooks, M. Macucci, G. Iannaccone, K. S. Novoselov, C. Casiraghi and G. Fiori, Nanoscale, 2020, 12, 6708
DOI: 10.1039/C9NR09289G

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