An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode
Emerging resistive random access memory attracts extensive research enthusiasms. In this study, an indirect way to improve resistive random access memory (RRAM) comprehensive performance through electrode material re-design without intensive switching layer engineering is presented by adopting a composite Hafnium-Indium-Tin-Oxide. Working parameters of the device can be effectively improved, which not only low operation power consumption and high working stability are achieved, but memory window is significantly enlarged accompanied with an automatic self-current-compliance function. The correlation between hafnium incorporation and performance improvements and the corresponding current conduction mechanisms have been thoroughly investigated to clarify the resistive switching behavior and to explain the oxygen absorption buffer effect. Hafnium atom with large atomic radius is surrounded by soft electron clouds and has high chemical activity to attract oxygen ions. It makes easier for more oxygen ions to accumulate around the interface of the top electrode and the resistive switching layer, leading to lower current and Schottky conduction. This study presents an important strategy for designing and developing electrode materials to improve the characteristics of RRAM and enlightens us adopting indirect method to modify device working behaviors, which also unveils a promising prospect for its potential application in the future low-power information storage and calculation technology areas.