A layered Ge2Sb2Te5 phase change material

Bo Zhang; Veronika Cicmancova; Jaroslav Kupcik; Stanislav Slang; Jhonatan Rodriguez Pereira; Roman Svoboda; Petr Kutalek; Tomas Wagner

doi:10.1039/C9NR08745A

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A layered Ge₂Sb₂Te₅ phase change material†

Bo Zhang,^a Veronika Cicmancova,^b Jaroslav Kupcik,^c Stanislav Slang,

^b Jhonatan Rodriguez Pereira,

^b Roman Svoboda,^d Petr Kutalek^e and Tomas Wagner

*^ab

Author affiliations

* Corresponding authors

^a Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice, Czech Republic
E-mail: tomas.wagner@upce.cz

^b Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Nam. Cs. Legii 565, 530 02 Pardubice, Czech Republic

^c Institute of Inorganic Chemistry, ASCR, 250 68 Husinec-Řež, Czech Republic

^d Department of Physical Chemistry Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice, Czech Republic

^e Joint Laboratory of Solid State Chemistry, University of Pardubice, Studentska 84, 532 10 Pardubice, Czech Republic

Abstract

In this study, a universal Ge₂Sb₂Te₅ phase change material was sputtered to obtain a layered structure. The crystalline phase of this material was prepared by annealing. SEM (scanning electron microscopy) and HRTEM (high-resolution transmission electron microscopy) images give confirmed that the sputtered Ge₂Sb₂Te₅ thin film in crystalline phase has multiple layers. The layers can be exfoliated by acetone. The thicknesses of acetone-exfoliated crystalline and amorphous flakes are approx. 10–60 nm.

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Article information

DOI: https://doi.org/10.1039/C9NR08745A
Article type: Paper
Submitted: 11 Oct 2019
Accepted: 06 Jan 2020
First published: 07 Jan 2020

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Nanoscale, 2020,12, 3351-3358

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A layered Ge₂Sb₂Te₅ phase change material

B. Zhang, V. Cicmancova, J. Kupcik, S. Slang, J. Rodriguez Pereira, R. Svoboda, P. Kutalek and T. Wagner, Nanoscale, 2020, 12, 3351 DOI: 10.1039/C9NR08745A

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