Layered Ge2Sb2Te5 phase change material
In this paper, a universal Ge2Sb2Te5 phase change material is sputtered with layered structure. The crystalline phase was prepared by annealing. SEM (Scanning Electron Microscope) and HRTEM (High-resolution transmission electron microscopy) images give confident information that the sputtered Ge2Sb2Te5 thin film in crystalline phase has multiple layers. The layers can be exfoliated by acetone. Thicknesses of acetone exfoliated crystalline and amorphous flakes are 10-60 nm.