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Highly efficient inverted perovskite solar cells incorporating P3CT-Rb as hole transport layer to achieve large open circuit voltage of 1.144 V

Abstract

P3CT has been noticed as a promising hole transport layer (HTL) for high-performance inverted planar perovskite solar cells (PSCs) due to its excellent stability and relatively high hole mobility. As we all know, the morphology of perovskite film is largely influenced by the substrate materials. Considering the affinity of alkali metal ions Rb+, Cs+ with perovskite materials, inverted perovskite solar cells using alkali metal ions (Rb+, Cs+) doped P3CT (denoted as P3CT-Rb, P3CT-Cs) as the HTLs were investigated in this work. It turned out that work function of P3CT-Rb matches well with the valence band of perovskite. Perovskite (MAPbI3-xClx) film deposited on top of the P3CT-Rb film exhibited a dense and uniform morphology with superior crystallinity and few pinholes. Consequently, a high efficiency of 20.52% was achieved on P3CT-Rb HTL-based devices, with an impressive open-circuit voltage (Voc) of 1.144 V and a high fill factor (FF) of 82.78%.

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Article information


Submitted
01 Oct 2019
Accepted
06 Jan 2020
First published
07 Jan 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Paper

Highly efficient inverted perovskite solar cells incorporating P3CT-Rb as hole transport layer to achieve large open circuit voltage of 1.144 V

S. Li, B. He, J. xu, H. Lu, J. Jiang, J. Zhu, Z. Kan, L. Zhu and F. Wu, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/C9NR08441J

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