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Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/ rhenium diselenide van der Waals heterojunction diode

Abstract

Tunneling based van der Waals (vdW) heterostructures composed of layered transition metal dichalcogenides (TMDs) are emerging as a unique compact system that provides new research avenues in electronics and optoelectronics. Here, we design a black phosphorus (BP)/ rhenium diselenide (ReSe2) and black phosphorus (BP)/ hexagonal boron nitride (h-BN)/rhenium diselenide (ReSe2) vdW heterojunction based diode and study the tunneling based different phenomenon’s such as rectification, negative differential resistance (NDR) and backward rectification. Further, we measure a gate tunable and tunneling based rectifying current in BP/ReSe2 and BP/h-BN/ReSe2 heterojunction diode and achieve the highest tunneling based rectification ratio up to (R.R≈3.4 ×〖10〗^7). The high rectifying current is explained by using the Simmons based approximation through direct tunneling (DT) and Fowler−Nordheim tunneling (FNT) in low and high bias regimes. Further, we extract the photo-responsivity (R≈12 mW/A) and external quantum efficiency (EQE≈2.79 %) under an illuminated laser light source of wavelength 532 nm. Finally, we demonstrate the potential application of our heterostructure devices such as a binary inverter, rectifier and switching operation at high frequency. Our tunneling based heterostructure device operates up to GHz frequency. So, our findings provide a new paragon to use the TMDS based vdW heterostructure in electronics and optoelectronics application such as multi-valued logic application.

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Supplementary files

Article information


Submitted
16 Sep 2019
Accepted
31 Dec 2019
First published
02 Jan 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Paper

Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/ rhenium diselenide van der Waals heterojunction diode

A. M. Afzal, M. Y. Javeed, N. A. Shah, M. Z. Iqbal, G. Dastgeer, M. M. Sajid and S. Mumtaz, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/C9NR07971H

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