Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/ rhenium diselenide van der Waals heterojunction diode
Tunneling based van der Waals (vdW) heterostructures composed of layered transition metal dichalcogenides (TMDs) are emerging as a unique compact system that provides new research avenues in electronics and optoelectronics. Here, we design a black phosphorus (BP)/ rhenium diselenide (ReSe2) and black phosphorus (BP)/ hexagonal boron nitride (h-BN)/rhenium diselenide (ReSe2) vdW heterojunction based diode and study the tunneling based different phenomenon’s such as rectification, negative differential resistance (NDR) and backward rectification. Further, we measure a gate tunable and tunneling based rectifying current in BP/ReSe2 and BP/h-BN/ReSe2 heterojunction diode and achieve the highest tunneling based rectification ratio up to (R.R≈3.4 ×〖10〗^7). The high rectifying current is explained by using the Simmons based approximation through direct tunneling (DT) and Fowler−Nordheim tunneling (FNT) in low and high bias regimes. Further, we extract the photo-responsivity (R≈12 mW/A) and external quantum efficiency (EQE≈2.79 %) under an illuminated laser light source of wavelength 532 nm. Finally, we demonstrate the potential application of our heterostructure devices such as a binary inverter, rectifier and switching operation at high frequency. Our tunneling based heterostructure device operates up to GHz frequency. So, our findings provide a new paragon to use the TMDS based vdW heterostructure in electronics and optoelectronics application such as multi-valued logic application.