Negative electrocaloric effect in antiferroelectric zirconium dioxide thin film
Huge negative electrocaloric effect is demonstrated in antiferroelectric ZrO2 thin film deposited byatomic layer deposition with 8nm in thickness. Adiabatic temperature change as high as∆T=−31K is obtained for an electric field change of∆E=3.45MV cm−1 at an ambient temperatureof 413K. Moreover, the ZrO2 thin film shows enhanced stability as demonstrated by enduranceand Preisach density maps. Due to its high phase transition temperature and thermal stability, itshigh scalability and full CMOS compatibility, ZrO2 is proposed as a promising candidate for futuremultilayer electrocaloric and solid-state cooling devices.