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Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors

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Abstract

This report demonstrates the fabrication of a flexible, water-soluble MoS2 QDs/PVA (polyvinyl alcohol) film sandwiched between Cu electrodes as a resistive memory. The active material film (MoS2 QD/PVA) of the device exhibited outstanding water solubility, dissolving the active material completely in ∼180 s, making it a promising candidate for transient/destructible memories. The device exhibited significant merits with an ON/OFF ratio of ∼150 with good cycling stability, excellent reproducibility, and data retention capability up to 1000 cycles. The memristive phenomena can be accounted for by the charge trapping, de-trapping, and quantum tunneling effects observed in nanoscale MoS2 QDs. The successful fabrication of the water-soluble MoS2 QDs/PVA resistive RAM opens up new avenues and opportunities for the development of transient memory in the fields of military, security devices, and intelligence applications.

Graphical abstract: Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors

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Supplementary files

Article information


Submitted
23 Apr 2020
Accepted
03 Jun 2020
First published
03 Jun 2020

New J. Chem., 2020, Advance Article
Article type
Paper

Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors

S. Koduvayur Ganeshan, V. Selamneni and P. Sahatiya, New J. Chem., 2020, Advance Article , DOI: 10.1039/D0NJ02053B

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