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A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor

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Abstract

This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO2 coated Si substrate. We found that ionizing radiation (gamma ray) interacts strongly with two-dimensional WS2, which induces effective p-doping in the samples. As the radiation dose increases, the p-doping concentration increases substantially. In addition, in the small radiation dose regime, the WS2 monolayers exhibit usual diamagnetic behavior. However, a remarkable ferromagnetic hysteresis emerges when the WS2 monolayer is irradiated with 400 Gys. This is attributed to the presence of irradiation-induced complex vacancies composed of one tungsten and a pair of its nearby sulfurs. Moreover, these results have shown that the detector based on the large scale monolayer VdWE-grown two-dimensional WS2 is an appealing candidate for sensing high-energy photons at small radiation doses.

Graphical abstract: A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor

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Publication details

The article was received on 25 Jun 2019, accepted on 01 Oct 2019 and first published on 02 Oct 2019


Article type: Communication
DOI: 10.1039/C9NH00414A
Nanoscale Horiz., 2020, Advance Article

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    A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor

    J. F. Felix, A. F. da Silva, S. W. da Silva, F. Qu, B. Qiu, J. Ren, W. M. de Azevedo, M. Henini and C. Huang, Nanoscale Horiz., 2020, Advance Article , DOI: 10.1039/C9NH00414A

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