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The dual interfacial modification of 2D g-C3N4 for high-efficiency and stable planar perovskite solar cells

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Abstract

Carrier recombination and charge loss at the interfaces of perovskite layers have a significant influence on high-performance planar perovskite solar cells (PSCs). We employed two-dimensional graphitic carbon nitride (g-C3N4), which is a heat-resistant n-type semiconductor, to modify the electron-transport layer/perovskite and perovskite/hole-transport layer interfaces, respectively. g-C3N4 could passivate the surface trap states of the methylammonium lead iodide light absorber through the formation of a Lewis adduct between N and the under-coordinated Pb, and it could also remarkably reduce the grain boundaries between perovskite crystal particles. A maximum power conversion efficiency (PCE) of 19.67% (Voc = 1.14 V, Jsc = 21.45 mA cm−2, FF = 0.807) could be obtained from planar PSCs with long-term stability using dual-positioned g-C3N4. Therefore, we consider that ultrathin semiconductor films with a Lewis base nature are suitable as dual-functional transport materials for devices. This work provides new guidance for dual-interfacial modification to improve the PCE and stability of devices.

Graphical abstract: The dual interfacial modification of 2D g-C3N4 for high-efficiency and stable planar perovskite solar cells

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Article information


Submitted
28 Jul 2020
Accepted
04 Oct 2020
First published
13 Oct 2020

This article is Open Access

Nanoscale Adv., 2020, Advance Article
Article type
Paper

The dual interfacial modification of 2D g-C3N4 for high-efficiency and stable planar perovskite solar cells

Z. Liu, S. Wu, X. Yang, Y. Zhou, J. Jin, J. Sun, L. Zhao and S. Wang, Nanoscale Adv., 2020, Advance Article , DOI: 10.1039/D0NA00613K

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