Few-Layer Hexagonal Bismuth Telluride (Bi2Te3) Nanoplates with High-Performance UV-Vis Photodetection
It is widely known that excellent intrinsic electronic and optoelectronic advantages of bismuthene and tellurene make them attractive for applications in transistor, logic and optoelectronic devices. However, their poor optoelectronic performances, such as photocurrent density and photoresponsivity, under ambient conditions severely hinder the practical applications. To satisfy the demand of high-performance optoelectronic devices, topological insulator, bismuth telluride nanoplates (Bi2Te3 NPs) with different sizes, successfully synthesized by a solvothermal approach are, for the first time, employed to fabricate working electrode for photoelectrochemical (PEC)-type photodetection. It is demonstrated that the as-prepared Bi2Te3 NPs-based photodetectors exhibit remarkably improved photocurrent density, enhanced photoresponsivity, faster response time and recovery time in UV-Vis region, compared to bismuthene and tellurene-based photodetectors. Additionally, the PEC stability measurement shows that Bi2Te3 NPs have a comparable long-term stability of on/off switching behaviour to the bismuthene and tellurene-based photodetectors. Therefore, it is anticipated that the present work can provide fundamental acknowledgement of the optoelectronic performance of a PEC-type Bi2Te3 NPs-based photodetector, shedding light on the new design of high-performance topological insulators-based optoelectronic devices.