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Issue 1, 2020
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Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

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Abstract

In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m−2 and current efficiency of 27.2 cd A−1 were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.

Graphical abstract: Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

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Supplementary files

Article information


Submitted
02 Oct 2019
Accepted
21 Nov 2019
First published
21 Nov 2019

This article is Open Access

Nanoscale Adv., 2020,2, 401-407
Article type
Paper

Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

P. Chiu and S. Yang, Nanoscale Adv., 2020, 2, 401
DOI: 10.1039/C9NA00618D

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    [Original citation] - Published by The Royal Society of Chemistry.

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