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Direct laser-patterned MXene–perovskite image sensor arrays for visible-near infrared photodetection

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Abstract

Solution-processed materials, including halide perovskites and newly discovered MXenes, are emerging as promising candidates for next-generation optoelectronic devices. Here, large-scale image sensor arrays (1250 pixels) based on a MXene/perovskite/MXene structure are demonstrated by utilizing top-down techniques, i.e. spin-coating and laser-scribing. The work allows processing perovskite and MXene materials into sub-millimeter photodetector arrays on a large scale with potential for further down-scaling of the device dimensions. The favorable energy level alignment and resonance enhancement of such materials enable efficient charge transfer and detection up to the near infrared region. A high responsivity of 84.77 A W−1, a high specific detectivity of 3.22 × 1012 Jones, and a large linear dynamic range (LDR) up to 82 dB in a broadband wavelength range from visible to near-infrared are achieved. In addition, the device shows an excellent image-capture capability under near infrared illumination. Given the tunability and compatibility with complementary metal–oxide–semiconductors (CMOS), the method potentially promotes the development of low-cost, high-performance, and large format photodetector arrays.

Graphical abstract: Direct laser-patterned MXene–perovskite image sensor arrays for visible-near infrared photodetection

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Supplementary files

Article information


Submitted
30 Mar 2020
Accepted
01 May 2020
First published
01 May 2020

Mater. Horiz., 2020, Advance Article
Article type
Communication

Direct laser-patterned MXene–perovskite image sensor arrays for visible-near infrared photodetection

A. Ren, J. Zou, H. Lai, Y. Huang, L. Yuan, H. Xu, K. Shen, H. Wang, S. Wei, Y. Wang, X. Hao, J. Zhang, D. Zhao, J. Wu and Z. Wang, Mater. Horiz., 2020, Advance Article , DOI: 10.1039/D0MH00537A

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