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Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

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Abstract

Metal chalcogenides are important members of the two-dimensional (2D) materials family and have been extensively investigated for high-performance electronic device applications. However, when they are produced on a large-scale, their carrier mobilities are strongly influenced by the surface conditions. Here, we print indium sulphide (In2S3) with the thickness down to the single unit cell limit on wafer-scale out of metallic indium liquid, in which structural indium vacancies are formed in an orderly fashion. First principles investigations reveal that the unique ordered-vacancy structure results in a highly dispersive conduction band with low effective electron mass, forming multiple band-like electronic transport channels sandwiched within the crystal structure which are less influenced by the surface conditions. Back-gated field effect transistors are fabricated, and the measured mobility is up to 58 cm2 V−1 s−1 with a high degree of reproducibility, which is amongst one of the highest reported for wafer-scale-grown ultra-thin metal chalcogenides. This establishes ordered-vacancy-enabled semiconductors in the 2D geometry as suitable alternatives for new generation high-performance electronic devices.

Graphical abstract: Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

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Publication details

The article was received on 28 Aug 2019, accepted on 15 Nov 2019 and first published on 16 Nov 2019


Article type: Communication
DOI: 10.1039/C9MH01365B
Mater. Horiz., 2020, Advance Article

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    Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

    A. Jannat, Q. Yao, A. Zavabeti, N. Syed, B. Y. Zhang, T. Ahmed, S. Kuriakose, M. Mohiuddin, N. Pillai, F. Haque, G. Ren, D. M. Zhu, N. Cheng, Y. Du, S. A. Tawfik, M. J. S. Spencer, B. J. Murdoch, L. Wang, C. F. McConville, S. Walia, T. Daeneke, L. Zhu and J. Z. Ou, Mater. Horiz., 2020, Advance Article , DOI: 10.1039/C9MH01365B

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