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A facile and robust approach to prepare fluorinated polymer dielectrics for probing the intrinsic transport behavior of organic semiconductors

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Abstract

Insulating polymers are often used as gate dielectric materials in all-solution processable organic thin-film transistors (OTFTs). Nonetheless, most of the polymers have poor resistance to common halogenated solvents and thus are not feasible for bottom-gate OTFT structures. In this contribution, we show that high molecular weight poly(2,3,4,5,6-pentafluorostyrene) (PPFS) is a gate dielectric material that can be free from this limitation. We prepare PPFS with a facile and efficient approach by using methyl isobutyl ketone (MIK) solvent in a basic wet-lab without the need of complex chemical equipment. Furthermore, the non-polar and hydrophobic nature of the PPFS surface allows us to probe the intrinsic transport behaviors of these acceptors. The MIK solvent-assisted polymerization method provides an alternative for low-cost effective gate polymer dielectric preparation. Such a novel but simple synthesis paradigm not only opens up a broad employment of solution-processable polymeric dielectrics for bottom-gate OTFTs, but also enables the full device potential with high-mobility semiconductors.

Graphical abstract: A facile and robust approach to prepare fluorinated polymer dielectrics for probing the intrinsic transport behavior of organic semiconductors

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Supplementary files

Article information


Submitted
07 Apr 2020
Accepted
18 Jun 2020
First published
18 Jun 2020

This article is Open Access

Mater. Adv., 2020, Advance Article
Article type
Paper

A facile and robust approach to prepare fluorinated polymer dielectrics for probing the intrinsic transport behavior of organic semiconductors

J. H. L. Ngai, C. C. M. Chan, C. H. Y. Ho, J. K. W. Ho, S. H. Cheung, H. Yin and S. K. So, Mater. Adv., 2020, Advance Article , DOI: 10.1039/D0MA00175A

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