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Issue 2, 2020
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Transport mechanism of copper sulfide embedded carbon nitride thin films: a formation free memristor

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Abstract

Nonvolatile electrical resistive behaviour was demonstrated for a copper sulfide nanoparticle decorated carbon nitride (CSCN) based device. The copper sulfide–carbon nitride composite system was synthesized using a high temperature in situ protocol, where the sulfide particles were highly dispersed on the carbon nitride matrix. The CSCN composite was characterized by using different analytical techniques. The transport mechanism of the device followed Poole–Frenkel (PF) for the OFF-state, whereas ohmic behaviour dominated for the ON-state. An endurance study of the device was performed with a duty-cycle of 50% for 2 × 103 cycles and the nonvolatile behavior of the device was studied with a duty-cycle of 0.16% for 2 × 103 s. Both the endurance and nonvolatile behavior exhibited excellent stability of the device with an ON to OFF ratio of 104.

Graphical abstract: Transport mechanism of copper sulfide embedded carbon nitride thin films: a formation free memristor

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Supplementary files

Article information


Submitted
29 Feb 2020
Accepted
13 Apr 2020
First published
14 Apr 2020

This article is Open Access

Mater. Adv., 2020,1, 228-234
Article type
Paper

Transport mechanism of copper sulfide embedded carbon nitride thin films: a formation free memristor

V. K. Perla, S. K. Ghosh and K. Mallick, Mater. Adv., 2020, 1, 228
DOI: 10.1039/D0MA00062K

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