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Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Abstract

III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations

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Article information


Accepted
22 Jan 2020
First published
16 Mar 2020

This article is Open Access

Faraday Discuss., 2020, Accepted Manuscript
Article type
Paper

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

M. R. Molas, A. Tyurnina, V. Zolyomi, A. Ott, D. J. Terry, M. Hamer, C. Yegel, A. Babiński, A. G. Nasibulin, A. C. Ferrari, V. Fal’ko and R. Gorbachev, Faraday Discuss., 2020, Accepted Manuscript , DOI: 10.1039/D0FD00007H

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