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Volume 222, 2020

Low temperature radical initiated hydrosilylation of silicon quantum dots

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Abstract

The photophysics of silicon quantum dots (QDs) is not well understood despite their potential for many optoelectronic applications. One of the barriers to the study and widespread adoption of Si QDs is the difficulty in functionalizing their surface, to make, for example, a solution-processable electronically-active colloid. While thermal hydrosilylation of Si QDs is widely used, the high temperature typically needed may trigger undesirable side-effects, like uncontrolled polymerization of the terminal alkene. In this contribution, we show that this high-temperature method for installing aromatic and aliphatic ligands on non-thermal plasma-synthesized Si QDs can be replaced with a low-temperature, radical-initiated hydrosilylation method. Materials prepared via this low-temperature route perform similarly to those created via high-temperature thermal hydrosilylation when used in triplet fusion photon upconversion systems, suggesting the utility of low-temperature, radical-initiated methods for creating Si QDs with a range of functional behavior.

Graphical abstract: Low temperature radical initiated hydrosilylation of silicon quantum dots

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Article information


Submitted
20 Dec 2019
Accepted
13 Jan 2020
First published
27 Feb 2020

Faraday Discuss., 2020,222, 190-200
Article type
Paper
Author version available

Low temperature radical initiated hydrosilylation of silicon quantum dots

T. T. Koh, T. Huang, J. Schwan, P. Xia, S. T. Roberts, L. Mangolini and Ming L. Tang, Faraday Discuss., 2020, 222, 190 DOI: 10.1039/C9FD00144A

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