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Issue 40, 2020
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Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted perovskite solar cells

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Abstract

Nickel oxide (NiOx) as a hole transport layer has been vastly investigated in perovskite solar cells (PSCs) due to the nature of p-type doping, highly transparent materials, and deep-lying valence bands. In this paper, a new phase based on trivalent Ni2O3 is synthesized by low temperature solution processing of mixed nickel (acetate/nitrate). In comparison, high-temperature solution-processing of divalent NiOx resulted in novel Ni2O3 thin films that display better consistency and superior energy compatibility with perovskite thin films. In this respect, high-performance perovskite solar cells are efficiently produced utilizing MA0.85FA0.15PbI0.9Cl0.1 perovskite with a power conversion efficiency (PCE) reaching 17.89% and negligible hysteresis comparable to 14.37% for NiOx. The Ni2O3-based PSCs reported the highest fill factor (FF) (82.66%) compared to that of divalent NiOx (67.53%). Different characterization studies and analyses supply proof of improved film quality, increased transport and extraction of charges, and suppressed charge recombination. Meanwhile, the device exhibits low hysteresis compared to sol–gel-processed NiOx.

Graphical abstract: Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted perovskite solar cells

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Supplementary files

Article information


Submitted
30 Aug 2020
Accepted
16 Sep 2020
First published
22 Sep 2020

Dalton Trans., 2020,49, 14243-14250
Article type
Paper

Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted perovskite solar cells

A. M. Elseman, L. Luo and Q. L. Song, Dalton Trans., 2020, 49, 14243
DOI: 10.1039/D0DT03029E

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