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Issue 28, 2020
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Establishing a new hot electrons transfer channel by ion doping in a plasmonic metal/semiconductor photocatalyst

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Abstract

A straightforward strategy is developed to improve the injection efficiency of hot electrons in a Ag/TiO2 plasmonic photocatalyst by introducing Fe as a dopant. The Fe dopant energy level formed within the bandgap of TiO2 provides an extra electron transfer channel for transferring the hot electrons induced by plasmonic Ag nanoparticles.

Graphical abstract: Establishing a new hot electrons transfer channel by ion doping in a plasmonic metal/semiconductor photocatalyst

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Article information


Submitted
26 Mar 2020
Accepted
13 May 2020
First published
14 May 2020

Phys. Chem. Chem. Phys., 2020,22, 15795-15798
Article type
Communication

Establishing a new hot electrons transfer channel by ion doping in a plasmonic metal/semiconductor photocatalyst

Z. Wang, J. Xue, H. Pan, L. Wu, J. Dong, H. Cao, S. Sun, C. Gao, X. Zhu and J. Bao, Phys. Chem. Chem. Phys., 2020, 22, 15795
DOI: 10.1039/D0CP01625J

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