Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 20, 2020
Previous Article Next Article

Strain induced spin-splitting and half-metallicity in antiferromagnetic bilayer silicene under bending

Author affiliations

Abstract

Searching for half-metals in low dimensional materials is not only of scientific importance, but also has important implications for the realization of spintronic devices on a small scale. In this work, we show theoretically that simple bending can induce spin-splitting in bilayer silicene. For bilayer silicene with Bernal stacking, the monolayer has a long range ferromagnetic spin order and between the two monolayers, the spin orders are opposite, giving rise to an antiferromagnetic configuration for the ground state of the bilayer silicene. Under bending, the antiferromagnetic spin order is retained but the energetic degeneracy of opposite spin states is lifted. Due to the unusual deformation potentials of the conduction band minimum (CBM) and valence band maximum (VBM) as revealed by density-functional theory calculations and density-functional tight-binding calculations, this spin-splitting is nearly proportional to the degree of bending deformation. Consequently, the spin-splitting can be significant and the desired half-metallic state may emerge when the bending increases, which has been verified by direct simulation of the bent bilayer silicene using the generalized Bloch theorem. Our results hint that bilayer silicene may be an excellent candidate for half-metallicity.

Graphical abstract: Strain induced spin-splitting and half-metallicity in antiferromagnetic bilayer silicene under bending

Back to tab navigation

Article information


Submitted
10 Mar 2020
Accepted
24 Apr 2020
First published
24 Apr 2020

Phys. Chem. Chem. Phys., 2020,22, 11567-11571
Article type
Paper

Strain induced spin-splitting and half-metallicity in antiferromagnetic bilayer silicene under bending

J. Shi, Y. Wang, X. Zhao, Y. Zhang, S. Yuan, S. Wei and D. Zhang, Phys. Chem. Chem. Phys., 2020, 22, 11567
DOI: 10.1039/D0CP01350A

Social activity

Search articles by author

Spotlight

Advertisements