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Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

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Abstract

BiFeO3 (BFO)-based heterostructures have been widely studied to develop high-speed, high-density and low-consumption nonvolatile memory. In this study, the resistive switching (RS) behavior in metal/BFO/SrRuO3 (SRO) heterostructures was investigated. The I–V curves of Pt/Fe/BFO/SRO and Pt/BFO/SRO heterostructures demonstrate that the RS behavior in the Pt/Fe/BFO/SRO heterostructures results from the fact that ferroelectric polarization modulated the depletion layer width around the BFO/SRO interface. According to the fitting results of the I–V curves, the conductivity mechanisms are the interface-limited Fowler–Nordheim tunneling mechanism in the negative bias and the space-charge-limited conduction mechanism in the positive bias. Compared with the memory performance in the Pt/BFO/SRO heterostructures, the memory performance in the Pt/Fe/BFO/SRO heterostructures evidently improved. The Fe layer with a work function similar to that of the BFO layer can decrease the barrier height and reduce the accumulation of the injected charges at the top-electrode/BFO interface, which further improves the ferroelectric performance of the BFO layer.

Graphical abstract: Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

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Supplementary files

Article information


Submitted
09 Jan 2020
Accepted
21 May 2020
First published
22 May 2020

Phys. Chem. Chem. Phys., 2020, Advance Article
Article type
Paper

Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

W. Zheng, Y. Wang, C. Jin, R. Yin, D. Li, P. Wang, S. Liu, X. Wang, D. Zheng and H. Bai, Phys. Chem. Chem. Phys., 2020, Advance Article , DOI: 10.1039/D0CP00124D

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