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Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

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Abstract

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices. By using first-principles calculations, here, we systematically investigate the effect of the GaGeTe substrate on the electronic properties of monolayer germanene. Linear dichroism of the Dirac-cone like band dispersion and higher carrier mobility (9.7 × 103 cm2 V−1 s−1) in the Ge/GaGeTe heterostructure (HTS) are found to be preserved compared to that of free-standing germanene. Remarkably, the band structure of HTS can be flexibly modulated by applying bias voltage or strain. A prototype data storage device FET based on Ge/GaGeTe HTS is proposed, which presents a promising high performance platform with a tunable band gap and high carrier mobility.

Graphical abstract: Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

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Article information


Submitted
28 Nov 2019
Accepted
04 Feb 2020
First published
04 Feb 2020

Phys. Chem. Chem. Phys., 2020, Advance Article
Article type
Paper

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

F. Zheng, L. Zhang, J. Zhang, P. Wang and C. Zhang, Phys. Chem. Chem. Phys., 2020, Advance Article , DOI: 10.1039/C9CP06445A

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