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Multilevel Resistive Switching Memory Behaviors Arising from Ions Diffusion and Photoelectron Transfer in α-Fe2O3 Nano-island Arrays

Abstract

The α-Fe2O3 nano-island arrays are grown on Ti substrate by hydrothermal process. Bipolar resistive switching (RS) memory behaviors can be detected in the Ag|α-Fe2O3|Ti device after operating an ultralow bias sweeping voltage of ±0.1 V. A SET voltage of ~20 mV is feasible under visible light illumination. By dual-control of photoelectric signal, a multi-nonvolatile state RS memory is feasible under dark and light condition. A weak RS memory behavior is dominated by ions diffusion and migration, while the separation and fast transfer of hole-electron pairs are responsible for the enhanced RS memory behavior under visible light illumination.

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Article information


Submitted
27 Nov 2019
Accepted
07 Jan 2020
First published
09 Jan 2020

Phys. Chem. Chem. Phys., 2020, Accepted Manuscript
Article type
Communication

Multilevel Resistive Switching Memory Behaviors Arising from Ions Diffusion and Photoelectron Transfer in α-Fe2O3 Nano-island Arrays

G. Zhou, Z. Ren and S. Wei, Phys. Chem. Chem. Phys., 2020, Accepted Manuscript , DOI: 10.1039/C9CP06392G

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