Multilevel Resistive Switching Memory Behaviors Arising from Ions Diffusion and Photoelectron Transfer in α-Fe2O3 Nano-island Arrays
The α-Fe2O3 nano-island arrays are grown on Ti substrate by hydrothermal process. Bipolar resistive switching (RS) memory behaviors can be detected in the Ag|α-Fe2O3|Ti device after operating an ultralow bias sweeping voltage of ±0.1 V. A SET voltage of ~20 mV is feasible under visible light illumination. By dual-control of photoelectric signal, a multi-nonvolatile state RS memory is feasible under dark and light condition. A weak RS memory behavior is dominated by ions diffusion and migration, while the separation and fast transfer of hole-electron pairs are responsible for the enhanced RS memory behavior under visible light illumination.