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Influence of the type of carrier on ferromagnetism in Si semiconductor implanted with Cu ions

Abstract

Silicon semiconductor samples implanted with Cu ions and samples co-implanted with Cu- and N-ions were prepared by MEVVA and the Kaufman technique. None of the samples showed evidence of secondary phases. The initially n-type Si matrix, when implanted with Cu ions, changed to a p-type semiconductor, and the Cu ions existed as local Cu2+ cations in the p-type environment. As a result, none of the Cu-implanted samples were ferromagnetic at room temperature. The co-implanted samples, on the other hand, showed room-temperature ferromagnetism because the introduction of N ions made the carrier type change from p-type to n-type which is favorable for the appearance of Cu2+. The first principle calculations were applied to understand the experimental phenomena. The formation energy reduced by the implanted N ions, and decreased effectively with the ratio of N to Cu ions increasing. The density of states and spin density of states indicated that hybridization of s, p and d electrons induced the ferromagnetic at 0 K. Based on the electron density and the electron spin density, we proposed a exchange interaction between of the Cu2+-N-(N4+)-Cu2+ ions mediated to explain the ferromagnetism.

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Article information


Submitted
15 Oct 2019
Accepted
08 Mar 2020
First published
09 Mar 2020

Phys. Chem. Chem. Phys., 2020, Accepted Manuscript
Article type
Paper

Influence of the type of carrier on ferromagnetism in Si semiconductor implanted with Cu ions

L. Wang, D. Hou, C. Wu, Y. Shi, S. Shi, W. Gao, S. Feng, Y. Liu, L. Li and D. Ji, Phys. Chem. Chem. Phys., 2020, Accepted Manuscript , DOI: 10.1039/C9CP05608D

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