High efficiency spin filtering in magnetic phosphorene
The unique set of semiconducting nature, good carrier mobility and low-spin orbit coupling aspects make phosphorene a highly prospective two dimensional material for cross-hybrid architectures of nanoelectronics, spintronics and optoelectronics. In the spintronic context, creation of a stable magnetic order in phosphorene can be immensely beneficial for designing phosphorene spin circuits. In this work, we present high efficiency spin filtering behaviour in magnetically rendered phosphorene. First, we calculate the effect of doping various 3d block elements in phosphorene to introduce a stable magnetic order. Next, by varying doping concentrations in distinct doping configurations, an extensive phase diagram has been obtained depicting the presence of various electronic and magnetic states. This allows us to achieve a high magnetisation in the presence of various transition metal atoms, with spin polarisation ∼ 100 % in half-metallic regimes. The transport behaviour reveals a map of the spin injection efficiency showing enhancement with doping concentration and reaching a perfect spin filtering capacity ∼ 100% in the presence of Ti, Cr, Mn, Co, and Fe atoms. The present results offer new insights towards engineered design of multi-functional phosphorene spintronic circuits.