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ε-InSe single crystals grown by a Horizontal Gradient Freeze method


Indium Selenide (InSe) single crystal has been considered as a promising candidate for future optical, electrical, and optoelectronic devices applications. Especially the ε-InSe, thanks to its 2H stacking and non-centrosymmetric feature, is highly desirable for second harmonic generation. However, due to the complex phase diagram, high chemical activity of the elements, and the large formation energy, single-phase crystal growth of ε-InSe still is a challenge. In this work, we first present our efforts using a horizonal gradient freeze (HGF) method to fabricate InSe single crystals, whose high-quality crystallinity has been both confirmed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Moreover, we further combine the photoluminescence, Raman spectroscopy and infrared absorption to identify this single crystal to be ε-InSe. Finally, the thickness-dependent second harmonic generation (SHG) measurements were performed on our few-layer InSe samples, which demonstrate its promising application for non-linear optics.

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Article information

30 Aug 2020
11 Oct 2020
First published
15 Oct 2020

CrystEngComm, 2020, Accepted Manuscript
Article type

ε-InSe single crystals grown by a Horizontal Gradient Freeze method

M. Sun, W. Wang, Q. Zhao, X. Gan, Y. Sun, W. Jie and T. Wang, CrystEngComm, 2020, Accepted Manuscript , DOI: 10.1039/D0CE01271H

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