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Issue 45, 2020
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ε-InSe single crystals grown by a horizontal gradient freeze method

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Abstract

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications. In particular, due to its 2H stacking and non-centrosymmetric feature, ε-InSe is highly desirable for second harmonic generation. However, due to its complex phase diagram, the high chemical activity of the elements, and the large formation energy, single-phase crystal growth of ε-InSe still remains a challenge. In this work, we present our efforts using a horizontal gradient freeze (HGF) method to fabricate InSe single crystals for the first time, whose high-quality crystallinity has been confirmed by both X-ray diffraction (XRD) and transmission electron microscopy (TEM). Moreover, we further combine the photoluminescence, Raman spectroscopy and infrared absorption data to identify this single crystal to be ε-InSe. Finally, thickness-dependent second harmonic generation (SHG) measurements were carried out on our few-layer InSe samples, and the results demonstrate its promising application for non-linear optics.

Graphical abstract: ε-InSe single crystals grown by a horizontal gradient freeze method

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Supplementary files

Article information


Submitted
30 Aug 2020
Accepted
11 Oct 2020
First published
15 Oct 2020

CrystEngComm, 2020,22, 7864-7869
Article type
Paper

ε-InSe single crystals grown by a horizontal gradient freeze method

M. Sun, W. Wang, Q. Zhao, X. Gan, Y. Sun, W. Jie and T. Wang, CrystEngComm, 2020, 22, 7864
DOI: 10.1039/D0CE01271H

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