Jump to main content
Jump to site search


Structures and transistor properties of extended and unsymmetrical birhodanines

Author affiliations

Abstract

Birhodanines exhibit n-channel transistor properties with air stability. In this work, birhodanines with extended skeletons are investigated, in which a phenylene or quinoidal moiety is inserted into the central C[double bond, length as m-dash]C part. We have also prepared N-phenyl and unsymmetrically N-substituted derivatives, including an unsubstituted N-H part. These compounds show n-channel transistor properties. In contrast to the herringbone structure of the parent compounds, the phenylene and phenyl compounds have stacking structures. The phenylene substitution decreases the acceptor ability, whereas the quinoidal substitution improves the acceptor ability and air stability of the transistors. The N-H derivative has a Z-form, suggesting the contribution of the enolic form, and the unsymmetrically N-substituted derivatives have double-layer structures with ordered alkyl chains.

Graphical abstract: Structures and transistor properties of extended and unsymmetrical birhodanines

Back to tab navigation

Supplementary files

Article information


Submitted
03 Aug 2020
Accepted
10 Sep 2020
First published
15 Sep 2020

CrystEngComm, 2020, Advance Article
Article type
Paper

Structures and transistor properties of extended and unsymmetrical birhodanines

Y. Sumimoto, K. Iijima, D. Yoo, T. Kawamoto, Y. Le Gal, D. Lorcy and T. Mori, CrystEngComm, 2020, Advance Article , DOI: 10.1039/D0CE01133A

Social activity

Search articles by author

Spotlight

Advertisements