Selective MOCVD synthesis of VO2 crystals on nanosharp Si structures

Abstract

In the present study, a strategy for the formation of hybrid Si/VO₂ nanostructures that is fully compatible with well-established standard silicon technology has been developed. The strategy is based on the selective synthesis of VO₂ NCs and their arrays on three-dimensional (3D) silicon structures with nanosharp tips, edges, and scallops. The possibility of highly selective synthesis of precise arrays of VO₂ nanorings on the surface of silicon cylinders, at the locations of Bosch scallops has been discovered and demonstrated. The optimum conditions for the MOCVD synthesis of high-quality single VO₂ (M-phase) NCs on nanosharp Si tips and edges were determined. The obtained results provide important information regarding the synthesis of VO₂ crystals on 3D Si nanostructures, and open up the possibility of the formation of a wide range of 3D hybrid nanostructures and their arrays for post-silicon optoelectronics and neuromorphic circuits and for active metamaterials and devices. The developed strategy can be easily integrated into standard silicon technology.