Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 20, 2020
Previous Article Next Article

3C–, 4H–, and 6H–SiC crystal habitus and interfacial behaviours in high temperature Si-based solvents

Author affiliations

Abstract

Solution growth of SiC is a promising process for producing high-quality SiC crystals; however, control over the morphology of the growth interface under rapid growth conditions is a critical issue. To evaluate crystal habit and interfacial growth of SiC in the high temperature solution, we conducted Ostwald ripening of 3C–, 4H– and 6H–SiC fine particles in various solvents. First, the crystal habits of 3C–, 4H– and 6H–SiC particles were evaluated. We revealed that 4H–SiC exhibited {10[1 with combining macron]2} in addition to {0001} and {10[1 with combining macron]0} as habit planes. Next, the rates of particle-growth of SiC in Si, Si–40 mol%Cr and Si–40 mol%Cr–4 mol%Al solvents were evaluated. The particle size of 4H–SiC in Si–40 mol%Cr solvent was greater than that in Si solvent. Furthermore, particle growth was suppressed on adding Al to Si–40 mol%Cr solvent. The particle-growth behaviour suggested that Al addition decreased the interfacial energy between 4H–SiC and the Si–40 mol%Cr solvent.

Graphical abstract: 3C–, 4H–, and 6H–SiC crystal habitus and interfacial behaviours in high temperature Si-based solvents

Back to tab navigation

Supplementary files

Article information


Submitted
06 Apr 2020
Accepted
01 May 2020
First published
04 May 2020

CrystEngComm, 2020,22, 3489-3496
Article type
Paper

3C–, 4H–, and 6H–SiC crystal habitus and interfacial behaviours in high temperature Si-based solvents

T. Narumi, D. Chaussende and T. Yoshikawa, CrystEngComm, 2020, 22, 3489
DOI: 10.1039/D0CE00521E

Social activity

Search articles by author

Spotlight

Advertisements