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Issue 7, 2020
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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

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Abstract

We present Au catalyzed p-GaAs nanowire growth on n-GaN layers as a possible method to grow an arsenide on a nitride compound semiconductor by metal organic vapor phase epitaxy. The GaAs growth position, the nanowire density and the nanowire growth direction are controlled by a combination of vapor–liquid–solid growth and selective area epitaxy. Thus, a spatially controlled nanowire growth is attained, which is mandatory for device fabrication. The growth position is defined by lithographically positioned Au discs on n-GaN. By adapting the growth conditions (QTBAs, presaturation) the nanowire density is optimized. Lateral and vertical anisotropic nanowire growth is attained through VLS growth in structured SiOx openings. Critical technological parameters for successful control of the growth direction are the positioning of the Au catalyst in relation to the SiOx mask, the size of the eutectic in relation to the opening dimensions, and the SiOx thickness. These results lead to distinct pn-junction positions and adjustable nanowire growth dimensions and directions.

Graphical abstract: Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

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Article information


Submitted
04 Dec 2019
Accepted
23 Jan 2020
First published
30 Jan 2020

CrystEngComm, 2020,22, 1239-1250
Article type
Paper

Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

C. Blumberg, L. Liborius, J. Ackermann, F.-J. Tegude, A. Poloczek, W. Prost and N. Weimann, CrystEngComm, 2020, 22, 1239
DOI: 10.1039/C9CE01926J

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