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In-plane enhanced epitaxy for step-flow AlN yielding a high-performance vacuum-ultraviolet photovoltaic detector

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Abstract

Vacuum ultraviolet (VUV) photodetection has great application prospects in the fields of space exploration, environmental science and biomedicine. In this work, we will present VUV-sensitive AlN single crystalline films (SCFs) with low defect density, grown by our independently designed in-plane enhanced hetero-epitaxial method. By combining the as-grown films with p-type graphene (p-Gr) serving as a transparent conductive layer, a VUV photovoltaic detector with a p-Gr/i-AlN/n-GaN structure was constructed. At zero bias, the detector exhibits an ultrafast response time of 2.86 μs, which is 2 orders of magnitude faster than that of a previously reported h-BN photoconductive detector. Besides, it also has an ultra-high photovoltage of 2 V and an excellent spectral selectivity. The results have demonstrated that the in-plane enhanced epitaxy strategy is expected to provide reference for the preparation of high-quality AlN and to promote the development of VUV detectors in deep space science.

Graphical abstract: In-plane enhanced epitaxy for step-flow AlN yielding a high-performance vacuum-ultraviolet photovoltaic detector

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Article information


Submitted
22 Nov 2019
Accepted
17 Dec 2019
First published
18 Dec 2019

CrystEngComm, 2020, Advance Article
Article type
Paper

In-plane enhanced epitaxy for step-flow AlN yielding a high-performance vacuum-ultraviolet photovoltaic detector

T. Li, F. Wang, R. Lin, W. Xie, Y. Li, W. Zheng and F. Huang, CrystEngComm, 2020, Advance Article , DOI: 10.1039/C9CE01852B

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