Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases
A method to grow few-layer graphene in form of “Inverted Pagoda” is proposed by controlling the pressure and the flow rate in circulating chemical vapor deposition system. Such the single-crystal few-layer graphene consist of one- to eight-layer graphene areas exhibiting layer growth characteristics. Moreover, each layer within this kind of few-layer graphene are in Bernal stacking. In this work, with the increasing growth pressure, the self-limiting effect of graphene was successfully broken, and the growth of graphene in the vertical direction was achieved. By controlling the ratio of H2 / CH4, the morphology and number of layers of the multilayer layer under the single-layer graphene were modulated.