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Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases

Abstract

A method to grow few-layer graphene in form of “Inverted Pagoda” is proposed by controlling the pressure and the flow rate in circulating chemical vapor deposition system. Such the single-crystal few-layer graphene consist of one- to eight-layer graphene areas exhibiting layer growth characteristics. Moreover, each layer within this kind of few-layer graphene are in Bernal stacking. In this work, with the increasing growth pressure, the self-limiting effect of graphene was successfully broken, and the growth of graphene in the vertical direction was achieved. By controlling the ratio of H2 / CH4, the morphology and number of layers of the multilayer layer under the single-layer graphene were modulated.

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Article information


Submitted
05 Nov 2019
Accepted
07 Jan 2020
First published
08 Jan 2020

CrystEngComm, 2020, Accepted Manuscript
Article type
Paper

Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases

W. Hou, J. Wang, Z. Wang, K. Cao, L. Qin and L. Wang, CrystEngComm, 2020, Accepted Manuscript , DOI: 10.1039/C9CE01751H

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