Jump to main content
Jump to site search

Issue 3, 2020
Previous Article Next Article

Using a continuous flow reactor for aqueous lateral epitaxial overgrowth of low-dislocation-density ZnO layers on honeycomb-patterned structures

Author affiliations

Abstract

In this paper, we demonstrate a low-temperature aqueous solution process, based on a continuous flow reactor design, for the long-duration continuous growth of ZnO epitaxial layers at a constant growth rate without interruption. Using a strategy of site-controlled epitaxial growth of ZnO, we grew patterned ZnO mesas having hexagonal honeycomb structures on top of lattice-matched patterned ZnAl2O4 buffer layers. Subsequently, we applied the continuous flow reactor for long-duration lateral epitaxial overgrowth (LEO) of ZnO layers on the honeycomb-patterned ZnO mesas. Dislocation etch pit analysis suggested a dislocation density for the coalesced LEO-grown ZnO layer of approximately 108 cm−2. X-ray diffraction revealed that the combination of LEO and a hexagonal honeycomb geometry is a promising approach for preparing wing-tilt-free thick ZnO layers displaying substantial strain relief. The micro-photoluminescence spectra of the overgrown wings featured a more intense band edge emission, confirming the significant improvement in crystalline quality in the wing regions.

Graphical abstract: Using a continuous flow reactor for aqueous lateral epitaxial overgrowth of low-dislocation-density ZnO layers on honeycomb-patterned structures

Back to tab navigation

Article information


Submitted
22 Sep 2019
Accepted
04 Dec 2019
First published
04 Dec 2019

CrystEngComm, 2020,22, 487-496
Article type
Paper

Using a continuous flow reactor for aqueous lateral epitaxial overgrowth of low-dislocation-density ZnO layers on honeycomb-patterned structures

H. Chen, H. Wang, S. Yang and X. Lin, CrystEngComm, 2020, 22, 487
DOI: 10.1039/C9CE01500K

Social activity

Search articles by author

Spotlight

Advertisements