Semi-transparent quaternary oxynitride photoanodes on GaN underlayers

Zili Ma; Karolina Piętak; Jędrzej Piątek; Justin Reed DeMoulpied; Anna Rokicińska; Piotr Kuśtrowski; Richard Dronskowski; Sebastian Zlotnik; Robert H. Coridan; Adam Slabon

doi:10.1039/D0CC04894A

Semi-transparent quaternary oxynitride photoanodes on GaN underlayers†

Zili Ma,

^ab Karolina Piętak,

^cd Jędrzej Piątek,

^b Justin Reed DeMoulpied,^e Anna Rokicińska,

^f Piotr Kuśtrowski,

^f Richard Dronskowski,

^ag Sebastian Zlotnik,

^ch Robert H. Coridan

*^e and Adam Slabon

*^b

Author affiliations

* Corresponding authors

^a Institute of Inorganic Chemistry, RWTH Aachen University, 52056 Aachen, Germany

^b Department of Materials and Environmental Chemistry, Stockholm University, 10691 Stockholm, Sweden
E-mail: adam.slabon@mmk.su.se

^c Łukasiewicz Research Network, Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland

^d Warsaw University of Technology, Faculty of Chemistry, Noakowskiego 3, 00-664 Warsaw, Poland

^e Department of Chemistry and Biochemistry and the Materials Science and Engineering Program, University of Arkansas, Fayetteville, Arkansas 72701, USA
E-mail: rcoridan@uark.edu

^f Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland

^g Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Nanshan District, Shenzhen, China

^h Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

Abstract

Conformal atomic layer deposition (ALD) technique is employed to make semi-transparent TaO_xN_y, providing the possibility to build semi-transparent oxy(nitride) heterojunction photoanodes on conductive substrates. A generalized approach was developed to manufacture semi-transparent quaternary metal oxynitrides on conductive substrates beyond semi-transparent binary Ta₃N₅ photoanodes aiming for wireless tandem photoelectrochemical (PEC) cells.

Chemical Communications

Semi-transparent quaternary oxynitride photoanodes on GaN underlayers†

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Semi-transparent quaternary oxynitride photoanodes on GaN underlayers

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