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Semi-transparent quaternary oxynitride photoanodes on GaN underlayers

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Abstract

Conformal atomic layer deposition (ALD) technique is employed to make semi-transparent TaOxNy, providing the possibility to build semi-transparent oxy(nitride) heterojunction photoanodes on conductive substrates. A generalized approach was developed to manufacture semi-transparent quaternary metal oxynitrides on conductive substrates beyond semi-transparent binary Ta3N5 photoanodes aiming for wireless tandem photoelectrochemical (PEC) cells.

Graphical abstract: Semi-transparent quaternary oxynitride photoanodes on GaN underlayers

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Article information


Submitted
16 Jul 2020
Accepted
29 Sep 2020
First published
29 Sep 2020

This article is Open Access

Chem. Commun., 2020, Advance Article
Article type
Communication

Semi-transparent quaternary oxynitride photoanodes on GaN underlayers

Z. Ma, K. Piętak, J. Piątek, J. Reed DeMoulpied, A. Rokicińska, P. Kuśtrowski, R. Dronskowski, S. Zlotnik, R. H. Coridan and A. Slabon, Chem. Commun., 2020, Advance Article , DOI: 10.1039/D0CC04894A

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