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Reduced graphene oxide–silicon interface involving direct Si–O bonding as a conductive and mechanical stable ohmic contact

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Abstract

Metal–semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of <4 × 10−6 Ω cm2 between platinum and n-type Si (111)–H surfaces. This involved Si–O covalent bonding a monolayer of graphene oxide (GO) to the Si surface followed by electrochemical reduction to form reduced graphene oxide (rGO). Current–voltage plots demonstrate that the GO/rGO transformation is associated with a change from a rectifying to an ohmic contact. The process is a viable method for constructing semiconductor–rGO interfaces and demonstrates that GO/rGO monolayers can be used as active components in tuning the contact resistance of metal–semiconductor junctions.

Graphical abstract: Reduced graphene oxide–silicon interface involving direct Si–O bonding as a conductive and mechanical stable ohmic contact

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Article information


Submitted
30 Mar 2020
Accepted
28 Apr 2020
First published
28 Apr 2020

Chem. Commun., 2020, Advance Article
Article type
Communication

Reduced graphene oxide–silicon interface involving direct Si–O bonding as a conductive and mechanical stable ohmic contact

S. Rahpeima, E. M. Dief, C. R. Peiris, S. Ferrie, A. Duan, S. Ciampi, C. L. Raston and N. Darwish, Chem. Commun., 2020, Advance Article , DOI: 10.1039/D0CC02310H

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