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Effect of functional groups on microporous polymer based resistance switching memory devices

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Abstract

Here, two large-area microporous polymer (MP) films with different substituents were synthesized at the solution/air interface. The on/off ratios of the MP-based memristors differ by an order of magnitude and the turn-on voltages differ by about 0.2 V, which is mainly attributed to the difference in band gap and pore environment of the materials.

Graphical abstract: Effect of functional groups on microporous polymer based resistance switching memory devices

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Article information


Submitted
24 Feb 2020
Accepted
23 Apr 2020
First published
25 Apr 2020

Chem. Commun., 2020, Advance Article
Article type
Communication

Effect of functional groups on microporous polymer based resistance switching memory devices

Y. Song, J. Liu, W. Li, L. Liu, L. Yang, S. Lei and W. Hu, Chem. Commun., 2020, Advance Article , DOI: 10.1039/D0CC01397H

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