Nitroaromatics as n-type organic semiconductors for field effect transistors

Abstract

The nitro group (NO₂) is one of the most common electron-withdrawing groups but it has rarely been used in the design of organic semiconductors (OSCs). Herein, we report the n-type semiconducting behavior of simple fluorenone derivatives functionalized with NO₂ and CN groups. While the electron mobilities measured in the thin film field-effect transistors are modest (10⁻⁶–10⁻⁴ cm² V⁻¹ s⁻¹), the nitrofluorenone OSCs offer excellent air-stability and remarkable tunability of energy levels via facile modification of the substitution pattern. We study the effect of substituents on the electrochemical properties, molecular and crystal structure, and the charge transport properties of nitrofluorenones to revitalize the underestimated potential of NO₂ functionalization in organic electronics.