Jump to main content
Jump to site search


Interface passivation to overcome shunting in semiconductor–catalyst junctions

Author affiliations

Abstract

High-performance mesoporous hematite photoanodes modified with a conductive water oxidation catalyst, Ni0.75Fe0.25OxHy, for photoelectrochemical water oxidation are limited by shunting. We present a general method to overcome shunting via the selective electrodeposition of a thin poly(phenylene oxide) (PPO) insulating layer onto the exposed transparent conductive oxide substrate following catalyst deposition.

Graphical abstract: Interface passivation to overcome shunting in semiconductor–catalyst junctions

Back to tab navigation

Supplementary files

Article information


Submitted
10 Dec 2019
Accepted
27 Jan 2020
First published
27 Jan 2020

Chem. Commun., 2020, Advance Article
Article type
Communication

Interface passivation to overcome shunting in semiconductor–catalyst junctions

P. Shadabipour and T. W. Hamann, Chem. Commun., 2020, Advance Article , DOI: 10.1039/C9CC09597G

Social activity

Search articles by author

Spotlight

Advertisements