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Issue 2, 2020
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Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

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Abstract

The interfacial electron transfer capability of Si/SiO2 wafer supported single layer graphene is optimized by thermal annealing in an inert gas environment, which facilitates its applications in both electrochemical and electronic devices.

Graphical abstract: Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

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Supplementary files

Article information


Submitted
17 Oct 2019
Accepted
26 Nov 2019
First published
27 Nov 2019

Chem. Commun., 2020,56, 253-256
Article type
Communication

Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

X. Liu, M. M. Sartin, Y. Liu, Z. Tian and D. Zhan, Chem. Commun., 2020, 56, 253
DOI: 10.1039/C9CC08150J

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