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Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

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Abstract

The interfacial electron transfer capability of Si/SiO2 wafer supported single layer graphene is optimized by thermal annealing in an inert gas environment, which facilitates its applications in both electrochemical and electronic devices.

Graphical abstract: Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

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Publication details

The article was received on 17 Oct 2019, accepted on 26 Nov 2019 and first published on 27 Nov 2019


Article type: Communication
DOI: 10.1039/C9CC08150J
Chem. Commun., 2020, Advance Article

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    Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

    X. Liu, M. M. Sartin, Y. Liu, Z. Tian and D. Zhan, Chem. Commun., 2020, Advance Article , DOI: 10.1039/C9CC08150J

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