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Issue 34, 2020, Issue in Progress
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Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD

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Abstract

Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal–Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3 films on Si(111).

Graphical abstract: Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD

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Supplementary files

Article information


Submitted
19 Mar 2020
Accepted
18 May 2020
First published
27 May 2020

This article is Open Access

RSC Adv., 2020,10, 19936-19942
Article type
Paper

Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD

M. Rimoldi, R. Cecchini, C. Wiemer, A. Lamperti, E. Longo, L. Nasi, L. Lazzarini, R. Mantovan and M. Longo, RSC Adv., 2020, 10, 19936
DOI: 10.1039/D0RA02567D

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