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Issue 60, 2020
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Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

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Abstract

The strong in-plane anisotropy and quasi-1D electronic structures of transition-metal trichalcogenides (MX3; M = group IV or V transition metal; X = S, Se, or Te) have pronounced influence on moulding the properties of MX3 materials. In particular, the infinite trigonal MX6 prismatic chains running parallel to the b-axis are responsible for the manifestation of anisotropy in these materials. Several marvellous properties, such as inherent electronic, optical, electrical, magnetic, superconductivity, and charge density wave (CDW) transport properties, make transition-metal trichalcogenides (TMTCs) stand out from other 2D materials in the fields of nanoscience and materials science. In addition, with the assistance of pressure, temperature, and tensile strain, these materials and their exceptional properties can be tuned to a superior extent. The robust anisotropy and incommensurable properties make the MX3 family fit for accomplishing quite a lot of compelling applications in the areas of field effect transistors (FETs), solar and fuel cells, lithium-ion batteries, thermoelectricity, etc. In this review article, a precise audit of the distinctive crystal structures, static and dynamic properties, efficacious synthesis schemes, and enthralling applications of quasi-1D MX3 materials is made.

Graphical abstract: Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

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Article information


Submitted
20 Aug 2020
Accepted
14 Sep 2020
First published
02 Oct 2020

This article is Open Access

RSC Adv., 2020,10, 36413-36438
Article type
Review Article

Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

A. Patra and C. S. Rout, RSC Adv., 2020, 10, 36413
DOI: 10.1039/D0RA07160A

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