Issue 40, 2020

Heterogeneous semiconductor nanowire array for sensitive broadband photodetector by crack photolithography-based micro-/nanofluidic platforms

Abstract

The in situ growth of nanowires (NWs) into nano-/microelectromechanical systems (NEMS/MEMS) by solution processing is attractive for its relative simplicity and economic value. We present innovative, versatile microfabrication that produces multiple, heterogeneous semiconductor NWs. A crack photolithography-based micro-/nanofluidic platform has been developed. This platform offers the in situ solution growth of NWs while enabling the control of quantity, dimensions, orientation, alignment, position, and material. The generation of grain boundary (GB)-rich CH3NH3PbI3 NWs using the micro-/nanofluidic device is exemplary. High-quality single-crystal CH3NH3PbI3 NWs were derived by injection of a CH3NH3PbI3 solution. We produced a parallel NW array of CH3NH3PbI3 NW for visible light detection and ZnO NW for ultraviolet detection, thereby demonstrating an unprecedented broadband composite photodetector. The micro-/nanofluidic fabrication platform enables the production of multiple, heterogeneous semiconductor NW arrays on one substrate, offering the potential to elicit synergistic performance and functional enhancements from various NWs.

Graphical abstract: Heterogeneous semiconductor nanowire array for sensitive broadband photodetector by crack photolithography-based micro-/nanofluidic platforms

Supplementary files

Article information

Article type
Paper
Submitted
27 Apr 2020
Accepted
14 Jun 2020
First published
22 Jun 2020
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2020,10, 23712-23719

Heterogeneous semiconductor nanowire array for sensitive broadband photodetector by crack photolithography-based micro-/nanofluidic platforms

Q. Zhou, J. G. Park and T. Kim, RSC Adv., 2020, 10, 23712 DOI: 10.1039/D0RA03784B

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