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Issue 21, 2020
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Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

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Abstract

The performance of an electronic device based on a two-dimensional material is strongly affected by the contact with the metallic electrodes. In this article, we study the electronic properties of two-dimensional MoSSe in contact with a germanene electrode by first-principles calculations. The results show that the contact characteristics are significantly different for the two sides of MoSSe. Notably, for both sides in-plane tensile strain induces a transition from Schottky to Ohmic behavior. Increasing the thickness of MoSSe also leads to an Ohmic contact. We propose an effective route to high performance MoSSe electronic devices.

Graphical abstract: Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

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Supplementary files

Article information


Submitted
14 Mar 2020
Accepted
16 May 2020
First published
26 May 2020

This article is Open Access

Nanoscale, 2020,12, 11448-11454
Article type
Communication

Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

N. Zhao and U. Schwingenschlögl, Nanoscale, 2020, 12, 11448
DOI: 10.1039/D0NR02084B

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