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Issue 6, 2020
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Tip-induced oxidation of silicene nano-ribbons

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Abstract

We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag (110) surface using scanning tunneling microscopy and high-resolution photoemission spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V to induce oxygen dissociation and reaction. The higher reactivity of the silicene nanoribbons towards atomic oxygen is observed as expected. The HR-PES confirm these observations: even at high exposures of molecular oxygen, the Si 2p core-level peaks corresponding to pristine silicene remain dominant, reflecting a very low reactivity to molecular oxygen. Complete oxidation is obtained following exposure to high doses of atomic oxygen; the Si 2p core level peak corresponding to pristine silicene disappears.

Graphical abstract: Tip-induced oxidation of silicene nano-ribbons

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Article information


Submitted
26 Apr 2020
Accepted
12 May 2020
First published
20 May 2020

This article is Open Access

Nanoscale Adv., 2020,2, 2309-2314
Article type
Communication

Tip-induced oxidation of silicene nano-ribbons

M. R. Tchalala, H. Enriquez, A. Bendounan, A. J. Mayne, G. Dujardin, A. Kara, M. A. Ali and H. Oughaddou, Nanoscale Adv., 2020, 2, 2309
DOI: 10.1039/D0NA00332H

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