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Issue 7, 2020
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Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies

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Abstract

Direct evidence of N2 formation after annealing of (ZnO)1−x(GaN)x alloys was revealed. N2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N–N bonding is a competitive path for nitrogen after annealing, in addition to the increasing Ga–N bonds, indicating that N in O substitution sites (NO) is not a stable configuration.

Graphical abstract: Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies

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Article information


Submitted
06 Nov 2019
Accepted
07 Jan 2020
First published
31 Jan 2020

This article is Open Access

Phys. Chem. Chem. Phys., 2020,22, 3779-3783
Article type
Communication

Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies

C. Bazioti, V. S. Olsen, A. Y. Kuznetsov, L. Vines and Ø. Prytz, Phys. Chem. Chem. Phys., 2020, 22, 3779
DOI: 10.1039/C9CP06025A

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